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sir188dp-t1-re3 Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3
sir188dp-t1-re3 Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SiR188DP-T1-RE3
Enrgtech Part No:
ET100431810
Warranty:
Manufacturer
KWD 0.34
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
60V
Series:
TrenchFET
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
29nC
Maximum Power Dissipation Pd:
65.7W
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Width:
5 mm
Length:
5.99mm
Height:
1.07mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b81674891.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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