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si2319dds-t1-ge3 Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23
si2319dds-t1-ge3 Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
Si2319DDS-T1-GE3
Enrgtech Part No:
ET16945747
Warranty:
Manufacturer
KWD 0.05
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3.6A
Maximum Drain Source Voltage Vds:
40V
Package Type:
SOT-23
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
100mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.7W
Forward Voltage Vf:
-1.2V
Typical Gate Charge Qg @ Vgs:
12.5nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
1.4 mm
Length:
3.04mm
Height:
1.02mm
Automotive Standard:
No
pdf icon
0900766b81674866.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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